Negative differential resistance in monolayer WTe2 tunneling transistors

Mechanically modulated tunneling resistance in monolayer MoS2

Negative differential resistance of InGaAs dual channel transistors

We demonstrate a new type of velocity modulation transistor (VMT) with an InGaAs dual channel structure fabricated on an InP (001) substrate. The dual channel structure consists of a high mobility 10 nm In0.53Ga0.47As quantum well, a 2 nm In0.52Al0.48As barrier layer, and a low mobility 1 nm In0.26Ga0.74As quantum well. The VMTs have a negative differential resistance (NDR) effect with a low so...

Chemoresponsive monolayer transistors.

This work details a method to make efficacious field-effect transistors from monolayers of polycyclic aromatic hydrocarbons that are able to sense and respond to their chemical environment. The molecules used in this study are functionalized so that they assemble laterally into columns and attach themselves to the silicon oxide surface of a silicon wafer. To measure the electrical properties of...

Tunable Negative Differential Resistance controlled by Spin Blockade in Single Electron Transistors

We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number, and magne...

Anisotropic electronic, mechanical, and optical properties of monolayer WTe2